Baishya, Srimanta: search on Z-Library

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1

[IEEE 2018 5th International Conference on Signal Processing and Integrated Networks (SPIN) - Noida, Delhi-NCR, India (2018.2.22-2018.2.23)] 2018 5th International Conference on Signal Processing and Integrated Networks (SPIN) - Access Point Planning for Disaster Scenario using Dragonfly Algorithm

Debnath, Sanjoy, Jee, Anand, Baishya, Srimanta, Arif, Wasim, Saikia, Partha Pratim, Naafi, Shoaib

Year:

2018

Language:

english

File:

PDF, 888 KB

english, 2018

2

A threshold voltage model for short-channel MOSFETs taking into account the varying depth of channel depletion layers around the source and drain

Srimanta Baishya, Abhijit Mallik, Chandan Kumar Sarkar

Journal:

Microelectronics Reliability

Year:

2008

Language:

english

File:

PDF, 415 KB

english, 2008

3

An improved analytical and finite element method model of nanoelectromechanical system based micromachined ultrasonic transducers

Maity, Reshmi, Maity, Niladri Pratap, Thapa, R. K., Baishya, Srimanta

Journal:

Microsystem Technologies

Year:

2017

Language:

english

File:

PDF, 1.07 MB

english, 2017

4

A High Precision Lumped Parameter Model for Piezoelectric Energy Harvesters

Baishya, Srimanta, Borthakur, Debarun, Kashyap, Richik, Chatterjee, Amitabh

Journal:

IEEE Sensors Journal

Year:

2017

Language:

english

File:

PDF, 1.05 MB

english, 2017

5

Analytical Threshold Voltage and Subthreshold Swing Model for TMG FinFET

Saha, Rajesh, Bhowmick, Brinda, Baishya, Srimanta

Journal:

International Journal of Electronics

Year:

2018

Language:

english

File:

PDF, 2.39 MB

english, 2018

6

Subthreshold surface potential and drain current models for short-channel pocket-implanted MOSFETs

Srimanta Baishya, Abhijit Mallik, Chandan Kumar Sarkar

Journal:

Microelectronic Engineering

Year:

2007

Language:

english

File:

PDF, 651 KB

english, 2007

7

[IEEE 2017 Devices for Integrated Circuit (DevIC) - Kalyani, India (2017.3.23-2017.3.24)] 2017 Devices for Integrated Circuit (DevIC) - Dual stacked gate dielectric source/oxide overlap Si/Ge FinFETs: Proposal and analysis

Das, Rajashree, Baishya, Srimanta

Year:

2017

Language:

english

File:

PDF, 488 KB

english, 2017

8

Performance analysis of RF MEMS capacitive switch with non uniform meandering technique

Guha, Koushik, Kumar, Mithlesh, Parmar, Ajay, Baishya, Srimanta

Journal:

Microsystem Technologies

Year:

2016

Language:

english

File:

PDF, 1.88 MB

english, 2016

9

An Efficient Model of Nanoelectromechanical Systems Based Ultrasonic Sensor with Fringing Field Effects

Maity, Reshmi, Maity, Niladri Pratap, Baishya, Srimanta

Journal:

IEEE Sensors Journal

Year:

2019

Language:

english

File:

PDF, 661 KB

english, 2019

10

[IEEE 2013 IEEE Third International Conference on Consumer Electronics ¿ Berlin (ICCE-Berlin) - IFA Fairground, Berlin, Germany (2013.09.9-2013.09.11)] 2013 IEEE Third International Conference on Consumer Electronics ¿ Berlin (ICCE-Berlin) - A power efficient 6-bit TIQ ADC design for portable applications

Mishra, Satya Narayan, Arif, Wasim, Mehedi, Jishan, Baishya, Srimanta

Year:

2013

Language:

english

File:

PDF, 446 KB

english, 2013

11

Analysis of Electrical Parameters of Ge/Si Heterojunction GeOI FinFETs

Das, Rajashree, Baishya, Srimanta

Journal:

Procedia Computer Science

Year:

2016

File:

PDF, 516 KB

2016

12

3D Double-Gate Junctionless Nanowire Transistor-Based Pass Transistor Logic Circuits for Digital Applications

Baidya, Achinta, Lenka, Trupti R., Baishya, Srimanta

Journal:

IETE Journal of Research

Year:

2019

Language:

english

File:

PDF, 2.17 MB

english, 2019

13

Electrical parameter analysis of gate-extension on source of germanium tri-gate FinFET

Das, Rajashree, Baishya, Srimanta

Journal:

International Journal of Nanoparticles

Year:

2019

File:

PDF, 298 KB

2019

14

[IEEE 2007 International Conference on Industrial and Information Systems - Peradeniya, Sri Lanka (2007.08.9-2007.08.11)] 2007 International Conference on Industrial and Information Systems - A threshold voltage model for DMG-MOS transistors taking into account the varying depth of channel depletion layers around the source and drain

Baishya, Srimanta, Mallik, Abhijit, Sarkar, Chandan Kumar

Year:

2007

Language:

english

File:

PDF, 1.26 MB

english, 2007

15

A Two-Dimensional Gate Threshold Voltage Model for a Heterojunction SOI-Tunnel FET With Oxide/Source Overlap

Chander, Sweta, Baishya, Srimanta

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 561 KB

english, 2015

16

Electrical noise in Circular Gate Tunnel FET in presence of interface traps

Goswami, Rupam, Bhowmick, Brinda, Baishya, Srimanta

Journal:

Superlattices and Microstructures

Year:

2015

Language:

english

File:

PDF, 2.59 MB

english, 2015

17

Impact of WFV on electrical parameters due to high-k/metal gate in SiGe channel tunnel FET

Saha, Rajesh, Bhowmick, Brinda, Baishya, Srimanta

Journal:

Microelectronic Engineering

Year:

2019

Language:

english

File:

PDF, 1.22 MB

english, 2019

18

[IEEE 2020 National Conference on Emerging Trends on Sustainable Technology and Engineering Applications (NCETSTEA) - Durgapur, India (2020.2.7-2020.2.8)] 2020 National Conference on Emerging Trends on Sustainable Technology and Engineering Applications (NCETSTEA) - Impact of Temperature and Trap Charges on Heterojunction Tunnel FET

Das, Debika, Pandey, Raju, Baishya, Srimanta, Chakraborty, Ujjal

Year:

2020

File:

PDF, 974 KB

2020

19

Study of Temperature Effect on Analog/RF and Linearity Performance of Dual Material Gate (DMG) Vertical Super-Thin Body (VSTB) FET

Barman, Kuheli Roy, Baishya, Srimanta

Journal:

Year:

2020

File:

PDF, 2.03 MB

2020

20

2-D Analytical Modeling of Surface Potential and Threshold Voltage for Vertical Super-Thin Body FET

Roy, Saurav, Chatterjee, Amitabh, Sinha, Dheeraj Kumar, Pirogova, Rimma, Baishya, Srimanta

Journal:

IEEE Transactions on Electron Devices

Year:

2017

Language:

english

File:

PDF, 1.35 MB

english, 2017

21

[IEEE 2016 7th India International Conference on Power Electronics (IICPE) - Patiala, India (2016.11.17-2016.11.19)] 2016 7th India International Conference on Power Electronics (IICPE) - Study of doubly clamped piezoelectric beam energy harvesters with non-traditional geometries

Kashyap, Richik, Lenka, Trupti Ranjan, Baishya, Srimanta

Year:

2016

Language:

english

File:

PDF, 433 KB

english, 2016

22

GaAs SOI FinFET: impact of gate dielectric on electrical parameters and application as digital inverter

Saha, Rajesh, Bhowmick, Brinda, Baishya, Srimanta

Journal:

International Journal of Nanoparticles

Year:

2018

Language:

english

File:

PDF, 489 KB

english, 2018

23

Temperature effect on RF/analog and linearity parameters in DMG FinFET

Saha, Rajesh, Bhowmick, Brinda, Baishya, Srimanta

Journal:

Applied Physics

Year:

2018

Language:

english

File:

PDF, 2.37 MB

english, 2018

24

[IEEE 2011 3rd International Conference on Electronics Computer Technology (ICECT) - Kanyakumari, India (2011.04.8-2011.04.10)] 2011 3rd International Conference on Electronics Computer Technology - 3D-TCAD simulation study of an electrically induced Source/drain cylindrically surrounding gate MOSFETs for reduced SCEs and HCEs

Gupta, Santosh Kumar, Baishya, Srimanta

Year:

2011

Language:

english

File:

PDF, 229 KB

english, 2011

25

Effect of gate dielectric on electrical parameters due to metal gate WFV in n-channel Si step FinFET

Saha, Rajesh, Bhowmick, Brinda, Baishya, Srimanta

Journal:

Micro & Nano Letters

Year:

2018

Language:

english

File:

PDF, 486 KB

english, 2018

26

Statistical Dependence of Gate Metal Work Function on Various Electrical Parameters for an n-Channel Si Step-FinFET

Saha, Rajesh, Bhowmick, Brinda, Baishya, Srimanta

Journal:

IEEE Transactions on Electron Devices

Year:

2017

Language:

english

File:

PDF, 2.29 MB

english, 2017

27

[IEEE 2017 1st International Conference on Electronics, Materials Engineering and Nano-Technology (IEMENTech) - Kolkata, India (2017.4.28-2017.4.29)] 2017 1st International Conference on Electronics, Materials Engineering and Nano-Technology (IEMENTech) - Secondary user capacity maximization in CR under nakagami-m fading channel with receiver diversity

Rai, Chandrashekhar, Debnath, Sanjoy, Baishya, Srimanta, Arif, Wasim

Year:

2017

Language:

english

File:

PDF, 657 KB

english, 2017

28

Controlling fixed trap charge effect in FinFET using heterodielectric BOX

Das, Rajashree, Baishya, Srimanta

Journal:

Electronics Letters

Year:

2018

Language:

english

File:

PDF, 488 KB

english, 2018

29

FOREWORD

Baishya, Srimanta, Biswas, Abhijit, Baishnab, K. L.

Journal:

Journal of Information and Optimization Sciences

Year:

2019

File:

PDF, 351 KB

2019

30

[IEEE 2014 International Conference on Electronics and Communication Systems (ICECS) - Coimbatore (2014.2.13-2014.2.14)] 2014 International Conference on Electronics and Communication Systems (ICECS) - An inclusive study on characteristics of junctionless transistor

Prashanth Kumar, B., Arif, Wasim, Baishya, Srimanta

Year:

2014

Language:

english

File:

PDF, 1.56 MB

english, 2014

31

[IEEE 2015 International Conference on Advances in Computer Engineering and Applications (ICACEA) - Ghaziabad, India (2015.3.19-2015.3.20)] 2015 International Conference on Advances in Computer Engineering and Applications - RF analysis of MEMS shunt capacitive switch with gold and aluminium beam

Agarwal, Saurabh, Kumar, Mithlesh, Guha, Koushik, Baishya, Srimanta

Year:

2015

Language:

english

File:

PDF, 283 KB

english, 2015

32

[IEEE 2020 IEEE Calcutta Conference (CALCON) - Kolkata, India (2020.2.28-2020.2.29)] 2020 IEEE Calcutta Conference (CALCON) - Impact of Dielectric Pocket on the Performance of Double Gate TFET

Debnath, Radhe Gobinda, Baishya, Srimanta

Year:

2020

File:

PDF, 1.01 MB

2020

33

Analog and RF Performance Analysis of a Junctionless Electrically Induced Source/Drain Extension Cylindrical Surround Gate (JLEJ-CSG) MOSFET

Gupta, Santosh Kumar, Baishya, Srimanta

Journal:

Journal of The Institution of Engineers (India): Series B

Year:

2015

Language:

english

File:

PDF, 2.11 MB

english, 2015

34

Quantum Analytical Modeling of Inversion Charge and Threshold Voltage in Modified Bi-Level FinFET (BL-FinFET)

Saha, Rajesh, Bhowmick, Brinda, Baishya, Srimanta

Journal:

ECS Journal of Solid State Science and Technology

Year:

2018

Language:

english

File:

PDF, 1.17 MB

english, 2018

35

A modified capacitance model of RF MEMS shunt switch incorporating fringing field effects of perforated beam

Guha, Koushik, Kumar, Mithlesh, Agarwal, Saurabh, Baishya, Srimanta

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.71 MB

english, 2015

36

A Model for Doubly Clamped Piezoelectric Energy Harvesters With Segmented Electrodes

Kashyap, Richik, Lenka, T. R., Baishya, Srimanta

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 490 KB

english, 2015

37

[IEEE 2017 Devices for Integrated Circuit (DevIC) - Kalyani, India (2017.3.23-2017.3.24)] 2017 Devices for Integrated Circuit (DevIC) - Gate-overlapped-source heterojunction tunnel tri-gate FinFET

Kumar, Pankaj, Roy, Saurav, Baishya, Srimanta

Year:

2017

Language:

english

File:

PDF, 513 KB

english, 2017

38

Deep insight into DC, RF/analog, and digital inverter performance due to variation in straggle parameter for gate modulated TFET

Saha, Rajesh, Vanlalawmpuia, K., Bhowmick, Brinda, Baishya, Srimanta

Journal:

Materials Science in Semiconductor Processing

Year:

2019

Language:

english

File:

PDF, 1.82 MB

english, 2019

39

A hybrid memory-based dragonfly algorithm with differential evolution for engineering application

Debnath, Sanjoy, Baishya, Srimanta, Sen, Debarati, Arif, Wasim

Journal:

Engineering with Computers

Year:

2020

File:

PDF, 2.41 MB

2020

40

Impact of work function on analog/RF and linearity parameters in step-FinFET

Saha, Rajesh, Bhowmick, Brinda, Baishya, Srimanta

Journal:

Indian Journal of Physics

Year:

2020

File:

PDF, 3.56 MB

2020

41

A Comprehensive Analysis of Spectrum Handoff Under Different Distribution Models for Cognitive Radio Networks

Arif, Wasim, Hoque, Shanidul, Sen, Debarati, Baishya, Srimanta

Journal:

Wireless Personal Communications

Year:

2015

Language:

english

File:

PDF, 3.89 MB

english, 2015

42

Analysis of GaN nanoscale FinFET for low power circuit applications

Das, Rajashree, Baishya, Srimanta

Journal:

Micro & Nano Letters

Year:

2018

Language:

english

File:

PDF, 385 KB

english, 2018

43

[IEEE TENCON 2015 - 2015 IEEE Region 10 Conference - Macao (2015.11.1-2015.11.4)] TENCON 2015 - 2015 IEEE Region 10 Conference - Performance analysis of 3D flexure FET with meandering gate for higher sensitivity

Chakrabarty, Pralay, Guha, Koushik, Baishya, Srimanta

Year:

2015

Language:

english

File:

PDF, 747 KB

english, 2015

44

[IEEE 2017 Devices for Integrated Circuit (DevIC) - Kalyani, India (2017.3.23-2017.3.24)] 2017 Devices for Integrated Circuit (DevIC) - Effects of temperature on electrical parameters in GaAs SOI FinFET and application as digital inverter

Saha, Rajesh, Bhowmick, Brinda, Baishya, Srimanta

Year:

2017

Language:

english

File:

PDF, 1.06 MB

english, 2017

45

[IEEE 2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC) - Aci Castello (CT), Italy (2014.10.12-2014.10.15)] 2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC) - Non uniform meander based low actuation voltage high capacitance ratio RF MEMS shunt capacitive switch

Guha, Koushik, Kumar, Mithlesh, Parmar, Ajay, Baishya, Srimanta

Year:

2014

Language:

english

File:

PDF, 1.20 MB

english, 2014

46

[IEEE 2017 IEEE 12th Nanotechnology Materials and Devices Conference (NMDC) - Singapore (2017.10.2-2017.10.4)] 2017 IEEE 12th Nanotechnology Materials and Devices Conference (NMDC) - New analytical model of switching capacitance for MEMS shunt perforated switch

Guha, Koushik, Baishya, Srimanta, Borah, Ananta Kumar

Year:

2017

Language:

english

File:

PDF, 416 KB

english, 2017

47

[IEEE 2020 National Conference on Emerging Trends on Sustainable Technology and Engineering Applications (NCETSTEA) - Durgapur, India (2020.2.7-2020.2.8)] 2020 National Conference on Emerging Trends on Sustainable Technology and Engineering Applications (NCETSTEA) - Optimization of Electrical Parameters in Dual Dielectric Spacer Overlapped DG Tunnel FET

Baruah, Karabi, Pandey, Raju, Chakraborty, Ujjal, Baishya, Srimanta

Year:

2020

File:

PDF, 1.25 MB

2020

48

Impact of source-doping gradient in terms of lateral straggle on the performance of germanium epitaxial layer double-gate TFET

Debnath, Radhe Gobinda, Baishya, Srimanta

Journal:

Applied Physics

Year:

2020

File:

PDF, 2.07 MB

2020

49

An analytical model for the surface potential and threshold voltage of a double-gate heterojunction tunnel FinFET

Maity, N. P., Maity, Reshmi, Baishya, Srimanta

Journal:

Journal of Computational Electronics

Year:

2018

Language:

english

File:

PDF, 1.30 MB

english, 2018

50

Impact of Mole Fractions due to Work Function Variability (WFV) of Metal Gate on Electrical Parameters in Strained SOI-FinFET

Saha, Rajesh, Bhowmick, Brinda, Baishya, Srimanta

Journal:

Year:

2019

Language:

english

File:

PDF, 1.69 MB

english, 2019

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